BUK7Y15-100EX
MOSFET N-CH 100V 68A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7Y15-100EX, offers a 100V drain-source voltage and a continuous drain current of 68A at 25°C (Tc). This AEC-Q101 qualified component features a low on-resistance of 15mOhm at 20A and 10V. With a maximum power dissipation of 195W (Tc) and a junction temperature range of -55°C to 175°C, it is designed for demanding applications. The device is housed in a surface-mount LFPAK56, Power-SO8 package (SC-100, SOT-669) and is supplied on tape and reel. Key parameters include a typical gate charge of 54.5 nC at 10V and input capacitance of 3958 pF at 25V. This MOSFET is suitable for automotive and industrial power switching applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 195W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 54.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3958 pF @ 25 V |
| Qualification | AEC-Q101 |
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