BUK7Y10-30B,115
MOSFET N-CH 30V 67A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, BUK7Y10-30B-115. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 67A at 25°C (Tc). The Rds(on) is specified at a maximum of 10mOhm at 25A and 10V gate-source voltage. With a maximum power dissipation of 85W (Tc), it is constructed using Nexperia's TrenchMOS technology for enhanced performance. The BUK7Y10-30B-115 is housed in a LFPAK56, Power-SO8 package (SOT-669) for surface mounting. Key electrical characteristics include a gate charge (Qg) of 18.8 nC maximum at 10V Vgs and input capacitance (Ciss) of 1183 pF maximum at 25V Vds. This component is AEC-Q101 qualified and rated for automotive applications, operating within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1183 pF @ 25 V |
| Qualification | AEC-Q101 |
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