BUK7E1R9-40E,127
MOSFET N-CH 40V 120A I2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET BUK7E1R9-40E-127. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). The device exhibits a low on-resistance of 1.9mOhm at 25A and 10V Vgs. Designed with a high pulse current capability, it is suitable for demanding power applications. The BUK7E1R9-40E-127 is housed in an I2PAK (TO-262-3 Long Leads) package for through-hole mounting, offering excellent thermal performance with a maximum power dissipation of 324W (Tc). Key electrical characteristics include a gate charge of 118nC at 10V and input capacitance of 9700pF at 25V. This automotive-qualified (AEC-Q101) MOSFET operates across a wide temperature range from -55°C to 175°C (TJ). Its robust design makes it suitable for automotive power systems, industrial motor control, and power supply applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 324W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | I2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9700 pF @ 25 V |
| Qualification | AEC-Q101 |
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