BUK7E1R8-40E,127
MOSFET N-CH 40V 120A I2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7E1R8-40E-127. This automotive-grade device features a 40V drain-source voltage and a continuous drain current capability of 120A at 25°C (Tc), with a maximum power dissipation of 349W (Tc). The BUK7E1R8-40E-127 offers a low on-resistance of 1.8mOhm at 25A and 10V. Designed for through-hole mounting in an I2PAK (TO-262-3 Long Leads) package, it is suitable for applications requiring robust power switching. Key parameters include a gate charge of 145 nC @ 10 V and input capacitance of 11340 pF @ 25 V. It operates across a temperature range of -55°C to 175°C (TJ). This component finds application in automotive power control and industrial motor drive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | I2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11340 pF @ 25 V |
| Qualification | AEC-Q101 |
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