BUK7C08-55AITE,118
MOSFET N-CH 55V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ BUK7C08-55AITE-118 is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 75A at 25°C, with a maximum power dissipation of 272W at the same temperature. The low on-resistance, specified as 8mOhm maximum at 50A and 10V gate drive, is achieved through Nexperia's TrenchMOS technology. Key parameters include a gate charge (Qg) of 116 nC maximum at 10V and input capacitance (Ciss) of 4200 pF maximum at 25V. This MOSFET incorporates a current sensing feature, making it suitable for advanced power management systems. Qualified to AEC-Q101 standards, it is ideal for demanding automotive applications. The component is supplied in a D2PAK-7 surface mount package, presented in Tape & Reel. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 50A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 272W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
| Qualification | AEC-Q101 |
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