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BUK7880-55/CUF

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BUK7880-55/CUF

MOSFET N-CH 55V 3.5A SOT223

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. BUK7880-55-CUF is an N-Channel MOSFET designed for power switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 3.5A at 25°C (Ta). With a maximum power dissipation of 8.3W (Tc), it is suitable for operation across a wide temperature range from -55°C to 150°C (TJ). The device exhibits a low on-resistance (Rds On) of 80mOhm at 5A and 10V. Packaged in a SOT-223 (TO-261-4, TO-261AA) surface mount configuration, it is supplied on tape and reel. Key parameters include an input capacitance (Ciss) of 500 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 4V at 1mA. This MOSFET is commonly utilized in industrial automation, power supplies, and automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs80mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)8.3W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageSOT-223
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 25 V

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