BUK768R1-100E,118
MOSFET N-CH 100V 100A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ BUK768R1-100E-118 is a high-performance N-Channel Power MOSFET. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 100A at 25°C, with a maximum power dissipation of 263W. The MOSFET exhibits a low on-resistance (Rds On) of 8.1mOhm at 25A and 10V drive voltage. Designed for demanding applications, it offers a gate charge (Qg) of 108 nC at 10V and input capacitance (Ciss) of 7380 pF at 25V. The BUK768R1-100E-118 is housed in a D2PAK (TO-263-3) surface-mount package, suitable for automated assembly. This device is qualified to AEC-Q101 standards, making it appropriate for automotive applications. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7380 pF @ 25 V |
| Qualification | AEC-Q101 |
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