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BUK7675-100A,118

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BUK7675-100A,118

MOSFET N-CH 100V 23A D2PAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. BUK7675-100A-118 is a TrenchMOS™ N-Channel Power MOSFET designed for demanding automotive applications. This device features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 23A at 25°C (Tc). With a maximum on-resistance (Rds On) of 75mOhm at 13A and 10V Vgs, it offers efficient power switching. The component is housed in a TO-263-3, D2PAK surface mount package and supports a maximum power dissipation of 99W (Tc). Key parameters include an input capacitance (Ciss) of 1210 pF at 25V and a gate threshold voltage (Vgs(th)) of 4V at 1mA. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is qualified to AEC-Q101 standards.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs75mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)99W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds1210 pF @ 25 V
QualificationAEC-Q101

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