BUK765R3-40E,118
MOSFET N-CH 40V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK765R3-40E-118. This AEC-Q101 qualified device features a 40V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). With a maximum on-resistance of 4.9mOhm at 25A and 10V Vgs, it offers efficient power switching. The BUK765R3-40E-118 is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package, supporting a maximum power dissipation of 137W (Tc). Key parameters include a gate charge (Qg) of 35.5 nC at 10V Vgs and input capacitance (Ciss) of 2772 pF at 25V Vds. Designed for automotive applications, this MOSFET is supplied on tape and reel. The device operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 137W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 35.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2772 pF @ 25 V |
| Qualification | AEC-Q101 |
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