BUK763R4-30,118
MOSFET N-CH 30V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. BUK763R4-30-118 is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 75A at 25°C (Tc). With a maximum Rds(on) of 3.4mOhm at 25A and 10V, it offers efficient power handling. The device supports a gate drive voltage up to 10V and has a maximum gate charge (Qg) of 75nC at 10V. Input capacitance (Ciss) is rated at 4951pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ). Power dissipation (Pd) is a substantial 255W at 25°C (Tc). Qualified to AEC-Q101 and featuring Automotive grade, this MOSFET is suitable for automotive and industrial power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 255W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4951 pF @ 25 V |
| Qualification | AEC-Q101 |
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