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BUK7631-100E,118

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BUK7631-100E,118

NEXPERIA BUK7631 - TRANSISTOR >3

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia's BUK7631-100E-118 is an N-Channel TrenchMOS™ MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 34 A at 25°C (Tc), with a maximum power dissipation of 96 W (Tc). The Rds On is specified at a maximum of 31 mOhm at 10 A and 10 V. With a gate charge (Qg) of 29.4 nC at 10 V and input capacitance (Ciss) of 1738 pF at 25 V, it offers efficient switching characteristics. The MOSFET operates at a drive voltage of 10V and has a Vgs(th) of 4V at 1mA, with a maximum Vgs of ±20V. Qualified to AEC-Q101 standards and featuring automotive grade, this surface mount D2PAK component is suitable for demanding automotive and industrial applications. It operates across a wide temperature range of -55°C to 175°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs31mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)96W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs29.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1738 pF @ 25 V
QualificationAEC-Q101

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