BUK762R0-40E,118
MOSFET N-CH 40V 120A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ part BUK762R0-40E-118 is a high-performance N-Channel Power MOSFET. This device features a 40V drain-to-source breakdown voltage and a continuous drain current of 120A at 25°C (Tc), with a maximum power dissipation of 293W (Tc). The Rds(on) is specified at a low 2mOhm at 25A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 109.2 nC (max) at 10V, input capacitance (Ciss) of 8500 pF (max) at 25V, and a threshold voltage (Vgs(th)) of 4V at 1mA. The device is designed for surface mounting in the TO-263-3, D2PAK package and operates across a temperature range of -55°C to 175°C (TJ). Qualified to AEC-Q101 standards, this MOSFET is suitable for demanding automotive applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 293W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 109.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500 pF @ 25 V |
| Qualification | AEC-Q101 |
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