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BUK7620-55A,118

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BUK7620-55A,118

MOSFET N-CH 55V 54A D2PAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia BUK7620-55A-118 is a TrenchMOS™ N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 54A (Tc) at 25°C. The device offers a maximum on-resistance (Rds On) of 20mOhm at 25A and 10V gate-source voltage, with a maximum power dissipation of 118W (Tc). Operating within a junction temperature range of -55°C to 175°C, this MOSFET is housed in a TO-263-3, D2PAK package suitable for surface mounting. The input capacitance (Ciss) is rated at a maximum of 1592 pF at 25V. Qualified to AEC-Q101 standards, the BUK7620-55A-118 is commonly utilized in automotive and industrial power management systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)118W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds1592 pF @ 25 V
QualificationAEC-Q101

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