BUK761R7-40E,118
MOSFET N-CH 40V 120A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK761R7-40E-118, is a 40 V device in a TO-263-3 D2PAK package. This surface mount component offers a continuous drain current capability of 120 A at 25°C (Tc) and a maximum power dissipation of 324 W (Tc). Featuring a low on-resistance of 1.6 mOhm at 25 A and 10 V, it utilizes Nexperia's TrenchMOS technology for enhanced performance. The gate charge (Qg) is 118 nC at 10 V, and input capacitance (Ciss) is 9700 pF at 25 V. Designed for demanding applications, this AEC-Q101 qualified MOSFET operates within a temperature range of -55°C to 175°C (TJ). Its robust construction and specifications make it suitable for automotive and industrial power switching applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 324W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9700 pF @ 25 V |
| Qualification | AEC-Q101 |
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