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BUK7613-100E,118

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BUK7613-100E,118

MOSFET N-CH 100V 72A D2PAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7613-100E-118. This AEC-Q101 qualified device features a 100 V drain-source voltage and a continuous drain current of 72 A at 25°C (Tc), with a maximum power dissipation of 182 W (Tc). It offers a low on-resistance of 13 mOhm at 20 A and 10 V. The MOSFET is housed in a surface-mount D2PAK (TO-263-3) package and is supplied on tape and reel. Key parameters include a gate charge of 97.2 nC (max) at 10 V and input capacitance of 4533 pF (max) at 20 V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for demanding automotive applications.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C72A (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)182W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs97.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4533 pF @ 20 V
QualificationAEC-Q101

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