BUK7611-55B,118
MOSFET N-CH 55V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ BUK7611-55B-118 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous drain current capability of 75 A (Tc) at 25°C. The device exhibits a low on-resistance (Rds On) of 11 mOhm maximum at 25 A and 10 V gate drive, coupled with a maximum power dissipation of 157 W (Tc). Key electrical parameters include a gate charge (Qg) of 37 nC maximum at 10 V and input capacitance (Ciss) of 2604 pF maximum at 25 V. The BUK7611-55B-118 is qualified to AEC-Q101 and operates across a temperature range of -55°C to 175°C (TJ). Its D2PAK (TO-263-3) surface mount package is suitable for demanding thermal environments. This MOSFET is commonly utilized in automotive power systems and industrial motor control applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 157W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2604 pF @ 25 V |
| Qualification | AEC-Q101 |
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