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BUK7610-55AL,118

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BUK7610-55AL,118

MOSFET N-CH 55V 75A D2PAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BUK7610-55AL-118 is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 55 V and supports a continuous Drain Current (Id) of 75 A at 25°C (Tc), with a maximum power dissipation of 300 W (Tc). The device boasts a low on-resistance (Rds On) of 10 mOhm at 25 A and 10 V, facilitated by its TrenchMOS™ technology. It is qualified to AEC-Q101 and carries an Automotive grade, making it suitable for demanding automotive systems. The MOSFET is supplied in a TO-263-3, D2PAK package, mounted via surface mount. Key parameters include a Gate Charge (Qg) of 124 nC at 10 V and an input capacitance (Ciss) of 6280 pF at 25 V. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6280 pF @ 25 V
QualificationAEC-Q101

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