BUK7610-100B,118
MOSFET N-CH 100V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7610-100B-118, offers a 100V drain-source voltage (Vdss) and 75A continuous drain current (Id) at 25°C. This AEC-Q101 qualified device features a low on-resistance (Rds On) of 10mOhm at 25A and 10V, with a gate threshold voltage (Vgs(th)) of 4V at 1mA. The device is housed in a TO-263-3, D2PAK package suitable for surface mounting and delivers a maximum power dissipation of 300W. Key parameters include a gate charge (Qg) of 80 nC at 10V and input capacitance (Ciss) of 6773 pF at 25V. Operating temperature ranges from -55°C to 175°C. This component is utilized in automotive applications and general power switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6773 pF @ 25 V |
| Qualification | AEC-Q101 |
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