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BUK7609-75A,118

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BUK7609-75A,118

MOSFET N-CH 75V 75A D2PAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK7609-75A-118, offers a 75V drain-source voltage rating and a continuous drain current capability of 75A at 25°C (Tc). This device features a low on-resistance of 9mOhm maximum at 25A and 10V Vgs, coupled with a significant power dissipation capacity of 230W (Tc). The N-Channel MOSFET is housed in a surface mount D2PAK (TO-263-3) package, ideal for applications requiring efficient power handling. With AEC-Q101 qualification and an automotive grade, this component is suitable for demanding automotive and industrial systems. Key electrical parameters include a maximum input capacitance (Ciss) of 6760 pF at 25V and a gate-source voltage (Vgs) tolerance of ±20V. The operating junction temperature range is -55°C to 175°C.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)230W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds6760 pF @ 25 V
QualificationAEC-Q101

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