BUK7607-30B,118
MOSFET N-CH 30V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ BUK7607-30B-118 is a high-performance N-channel MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc), with a maximum power dissipation of 157W (Tc). The BUK7607-30B-118 offers a low on-resistance of 7mOhm at 25A and 10V drive voltage, facilitated by its advanced TrenchMOS technology. Key parameters include a gate charge of 36 nC at 10V and input capacitance (Ciss) of 2427 pF at 25V. The component is housed in a TO-263-3, D2PAK package for efficient surface mounting and operates across a wide temperature range of -55°C to 175°C (TJ). Qualified to AEC-Q101 standards, this MOSFET is suitable for automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 157W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2427 pF @ 25 V |
| Qualification | AEC-Q101 |
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