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BUK758R3-40E,127

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BUK758R3-40E,127

MOSFET N-CH 40V 75A TO220AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BUK758R3-40E-127 is an N-channel power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and offers a continuous drain current capability of 75A at 25°C (Tc), with a maximum power dissipation of 96W (Tc). The low on-resistance of 7.4mOhm at 20A and 10V gate-source voltage, coupled with a gate charge of 24nC at 10V, ensures efficient switching performance. The BUK758R3-40E-127 is qualified to AEC-Q101 and carries an Automotive grade, making it suitable for automotive systems and industrial power management. Its TO-220AB package with through-hole mounting facilitates integration into robust circuit designs. The device operates within an extended temperature range of -55°C to 175°C (TJ), providing reliability in harsh environments. Input capacitance (Ciss) is specified at 1730pF at 25V, and the maximum gate-source voltage is ±20V.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs7.4mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)96W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1730 pF @ 25 V
QualificationAEC-Q101

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