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BUK7575-100A,127

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BUK7575-100A,127

MOSFET N-CH 100V 23A TO220AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Nexperia BUK7575-100A-127 is a high-performance N-Channel Power MOSFET from the TrenchMOS™ series, featuring a 100 V drain-source voltage (Vdss). This component offers a continuous drain current (Id) of 23 A at 25°C (Tc) and a maximum power dissipation of 99 W (Tc). With a low on-resistance (Rds On) of 75 mOhm at 13 A and 10 V (Vgs), it ensures efficient operation. The device is housed in a standard TO-220AB through-hole package, facilitating easy mounting. Key electrical characteristics include an input capacitance (Ciss) of 1210 pF at 25 V and a gate-source voltage (Vgs) range of ±20 V, with a threshold voltage (Vgs(th)) of 4 V at 1 mA. The BUK7575-100A-127 is suitable for applications in automotive and industrial power management systems. It operates across a wide temperature range of -55°C to 175°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs75mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)99W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds1210 pF @ 25 V

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