BUK755R4-100E,127
MOSFET N-CH 100V 120A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK755R4-100E-127, offers 100V drain-source voltage and a continuous drain current of 120A at 25°C (Tc). This TO-220AB packaged device features a low on-resistance of 5.2mOhm maximum at 25A and 10V, with a gate charge of 180nC maximum at 10V. The maximum power dissipation is 349W (Tc). Designed for automotive applications, this MOSFET is AEC-Q101 qualified and operates across a wide temperature range of -55°C to 175°C (TJ). Its through-hole mounting and robust construction make it suitable for demanding power switching applications in the automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11810 pF @ 25 V |
| Qualification | AEC-Q101 |
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