Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

BUK7526-100B,127

Banner
productimage

BUK7526-100B,127

MOSFET N-CH 100V 49A TO220AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7526-100B-127, offers a 100V drain-source voltage capability with a continuous drain current of 49A at 25°C (Tc). This through-hole TO-220AB packaged device features a low on-resistance of 26mOhm at 25A and 10V, coupled with a maximum power dissipation of 157W (Tc). Key parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 2891 pF at 25V. The device operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power switching.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C49A (Tc)
Rds On (Max) @ Id, Vgs26mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)157W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2891 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BSS138P,215

MOSFET N-CH 60V 360MA TO236AB

product image
PMGD290XN,115

MOSFET 2N-CH 20V 0.86A 6TSSOP

product image
PSMN102-200Y,115

MOSFET N-CH 200V 21.5A LFPAK56