BUK751R8-40E,127
MOSFET N-CH 40V 120A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ BUK751R8-40E-127 is a high-performance N-channel power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc), with a maximum power dissipation of 349W (Tc). The device boasts a low on-resistance of 1.8mOhm at 25A and 10V, facilitated by its advanced TrenchMOS technology. Key parameters include a gate charge of 145nC (max) at 10V and input capacitance of 11340pF (max) at 25V. The TO-220AB package facilitates through-hole mounting. This AEC-Q101 qualified component is suitable for automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11340 pF @ 25 V |
| Qualification | AEC-Q101 |
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