BUK724R5-30C,118
MOSFET N-CH 30V 75A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel power MOSFET, part number BUK724R5-30C-118, offers a 30V drain-source voltage and a continuous drain current of 75A at 25°C (Tc). This device features a low Rds(on) of 4.5mOhm at 25A and 10V, contributing to efficient power handling with a maximum power dissipation of 157W (Tc). The MOSFET is supplied in a DPAK (TO-252-3) surface-mount package, suitable for demanding applications. Key electrical parameters include a gate charge of 62nC at 10V and input capacitance of 3760pF at 25V. Qualified to AEC-Q101, this component is designed for use in automotive and industrial sectors. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 157W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3760 pF @ 25 V |
| Qualification | AEC-Q101 |
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