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BUK7227-100B,118

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BUK7227-100B,118

MOSFET N-CH 100V 48A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BUK7227-100B-118 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 48A at 25°C (Tc), with a maximum power dissipation of 167W (Tc). The Rds On is specified at a maximum of 27 mOhm at 25A and 10V Vgs. Key parameters include a gate charge (Qg) of 37 nC @ 10V and input capacitance (Ciss) of 2789 pF @ 25V. This MOSFET utilizes a surface mount DPAK (TO-252-3) package and operates across a wide temperature range of -55°C to 185°C. Qualified to AEC-Q101 standards, this device is suitable for automotive applications.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 185°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Rds On (Max) @ Id, Vgs27mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)167W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2789 pF @ 25 V
QualificationAEC-Q101

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