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BUK7226-75A,118

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BUK7226-75A,118

MOSFET N-CH 75V 45A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7226-75A-118. This device features a drain-source breakdown voltage (Vdss) of 75V and a continuous drain current (Id) of 45A at 25°C (Tc). The switch-on resistance (Rds On) is a maximum of 26mOhm at 25A and 10V gate drive. With a maximum power dissipation of 158W (Tc), this MOSFET is designed for high-efficiency switching applications. Key parameters include a gate charge (Qg) of 48 nC at 10V and input capacitance (Ciss) of 2385 pF at 25V. The component is housed in a TO-252-3, DPAK package suitable for surface mounting and is qualified to AEC-Q101 standards, making it suitable for automotive applications. Operating temperature range is from -55°C to 175°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Rds On (Max) @ Id, Vgs26mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)158W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2385 pF @ 25 V
QualificationAEC-Q101

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