BUK7219-55A,118
MOSFET N-CH 55V 55A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ BUK7219-55A-118 is an N-Channel Power MOSFET designed for demanding applications. This device features a 55V drain-source breakdown voltage and a continuous drain current capability of 55A at 25°C (Tc), with a maximum power dissipation of 114W (Tc). The low on-resistance (Rds On) of 19mOhm at 25A and 10V gate drive voltage, combined with its TrenchMOS™ technology, ensures efficient power switching. With a high junction temperature rating of 175°C and AEC-Q101 qualification, this MOSFET is suitable for automotive, industrial, and high-reliability power management systems. The TO-252-3, DPAK (2 Leads + Tab), SC-63 package facilitates surface mounting, and the component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2108 pF @ 25 V |
| Qualification | AEC-Q101 |
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