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BUK72150-55A,118

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BUK72150-55A,118

MOSFET N-CH 55V 11A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BUK72150-55A-118 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 11A at 25°C (Tc). With a maximum power dissipation of 36W (Tc) and a low Rds(on) of 150mOhm at 5A and 10V, it offers efficient power handling. The device utilizes Surface Mount mounting in a TO-252-3, DPAK package. Key parameters include a Gate Charge (Qg) of 5.5 nC at 10V and Input Capacitance (Ciss) of 322 pF at 25V. Qualified to AEC-Q101 standards and designated as Automotive Grade, this MOSFET is suitable for automotive systems and general-purpose power switching applications requiring robust performance and thermal management. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs150mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)36W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds322 pF @ 25 V
QualificationAEC-Q101

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