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BUK7210-55B,118

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BUK7210-55B,118

MOSFET N-CH 55V 75A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Nexperia BUK7210-55B-118 is a TrenchMOS™ N-Channel Power MOSFET designed for high-efficiency power switching applications. Featuring a drain-source voltage (Vdss) of 55V, this device offers a continuous drain current (Id) of 75A at 25°C (Tc) and a maximum power dissipation of 167W (Tc). The low on-resistance (Rds On) of 10mOhm at 25A and 10V, coupled with a gate charge (Qg) of 35 nC at 10V, ensures optimal switching performance. Manufactured with MOSFET technology and qualified to AEC-Q101 standards, it is suitable for automotive applications. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. Its operating temperature range is -55°C to 185°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 185°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)167W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2453 pF @ 25 V
QualificationAEC-Q101

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