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BUK7208-40B,118

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BUK7208-40B,118

MOSFET N-CH 40V 75A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7208-40B-118. This AEC-Q101 qualified device features a Drain-Source Voltage (Vdss) of 40 V and a continuous drain current (Id) of 75 A at 25°C (Tc). With a low on-resistance (Rds On) of 8 mOhm at 25 A and 10 V, and a maximum power dissipation of 167 W (Tc), it is engineered for demanding applications. The device is packaged in a TO-252-3, DPAK (SC-63) for surface mounting and is supplied on tape and reel. Key parameters include a gate charge (Qg) of 35 nC at 10 V and input capacitance (Ciss) of 2493 pF at 25 V. Operating temperature range is -55°C to 185°C (TJ). This component is widely utilized in automotive systems.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 185°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)167W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2493 pF @ 25 V
QualificationAEC-Q101

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