BUK7109-75ATE,118
MOSFET N-CH 75V 75A SOT426Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia USA Inc. TrenchMOS™ BUK7109-75ATE-118 is a high-performance N-channel Power MOSFET designed for demanding applications. This device features a 75V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc), with a maximum power dissipation of 272W (Tc). Its exceptionally low on-resistance of 9mOhm at 50A and 10V gate drive voltage minimizes conduction losses. The BUK7109-75ATE-118 incorporates a temperature sensing diode for enhanced thermal management. Packaged in a surface-mount D2PAK (TO-263-5) and supplied on tape and reel, this component is suitable for high-power switching and motor control applications across automotive and industrial sectors. It operates reliably within an extended temperature range of -55°C to 175°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 50A, 10V |
| FET Feature | Temperature Sensing Diode |
| Power Dissipation (Max) | 272W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 121 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 25 V |
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