BUK6Y57-60PX
MOSFET P-CH 60V 23A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ P-Channel Power MOSFET, part number BUK6Y57-60PX. This 60 V device features a continuous drain current of 23 A at 25°C (Tc) and a maximum power dissipation of 66 W (Tc). It offers a low on-resistance of 57 mOhm at 4.8 A, 10 V, and is designed with a gate charge of 24 nC at 10 V. The P-Channel MOSFET utilizes advanced TrenchMOS technology for enhanced performance. Mountable via surface mount in an LFPAK56, Power-SO8 (SC-100, SOT-669) package, it operates across a temperature range of -55°C to 175°C (TJ). Qualified to AEC-Q101 and featuring an automotive grade, this component is suitable for demanding applications in automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 30 V |
| Qualification | AEC-Q101 |
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