BUK6Y32-60PX
MOSFET P-CH 60V 40A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ P-Channel Power MOSFET, BUK6Y32-60PX, offers a 60V drain-source breakdown voltage and a continuous drain current of 40A (Tc) at 25°C. This MOSFET features a maximum on-resistance of 32mOhm at 6.6A and 10V Vgs. Designed for robust performance, it includes a gate charge of 52.9 nC at 10V Vgs and an input capacitance of 2590 pF at 30V Vds. The device has a maximum power dissipation of 106W (Tc) and is qualified to AEC-Q101 standards, making it suitable for automotive applications. Packaged in a surface-mount LFPAK56 (Power-SO8) with tape and reel packaging, it operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 106W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 52.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2590 pF @ 30 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
