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BUK6Y20-30PX

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BUK6Y20-30PX

MOSFET P-CH 30V 41A LFPAK56

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ P-Channel MOSFET, part number BUK6Y20-30PX, offers a 30V drain-source breakdown voltage and a continuous drain current of 41A (Tc) at 25°C. This device features a low on-resistance of 20mOhm maximum at 8.6A and 10V Vgs. The BUK6Y20-30PX is housed in an LFPAK56, Power-SO8 (SC-100, SOT-669) package, suitable for surface mounting. With a maximum power dissipation of 66W (Tc) and a junction temperature range of -55°C to 175°C, it is designed for demanding applications. Key parameters include a gate charge of 28 nC (max) at 10V Vgs and input capacitance of 1408 pF (max) at 15V Vds. This component is AEC-Q101 qualified and adheres to the TrenchMOS™ technology, making it suitable for automotive and industrial applications. It is supplied in tape and reel packaging.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-100, SOT-669
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C41A (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 8.6A, 10V
FET Feature-
Power Dissipation (Max)66W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageLFPAK56, Power-SO8
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1408 pF @ 15 V
QualificationAEC-Q101

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