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BUK6Y15-40PX

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BUK6Y15-40PX

MOSFET P-CH 40V 63A LFPAK56

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ P-channel MOSFET, part number BUK6Y15-40PX, is a surface mount device in an LFPAK56, Power-SO8 package. This automotive-grade component offers a Drain-to-Source Voltage (Vdss) of 40 V and a continuous drain current (Id) of 63 A at 25°C (Tc). The device features a maximum Rds On of 15 mOhm at 11 A and 10 V. With a maximum power dissipation of 106 W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 50 nC at 10 V and input capacitance (Ciss) of 2470 pF at 20 V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is qualified to AEC-Q101 standards, making it a robust choice for automotive and industrial power management systems.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-100, SOT-669
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)106W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageLFPAK56, Power-SO8
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2470 pF @ 20 V
QualificationAEC-Q101

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