BUK6E2R0-30C,127
MOSFET N-CH 30V 120A I2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ series N-channel MOSFET, part number BUK6E2R0-30C-127. This high-performance device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 120A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 2.2mOhm at 25A and 10V, and a power dissipation capability of 306W (Tc), it is suitable for demanding applications. The device operates within a temperature range of -55°C to 175°C (TJ) and is qualified to AEC-Q101, making it ideal for automotive applications. It is supplied in an I2PAK package (TO-262-3 Long Leads, I2PAK, TO-262AA) for through-hole mounting. Key parameters include a maximum Gate Charge (Qg) of 229 nC at 10V and an input capacitance (Ciss) of 14964 pF at 25V.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | I2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 229 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14964 pF @ 25 V |
| Qualification | AEC-Q101 |
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