BUK6C2R1-55C,118
MOSFET N-CH 55V 228A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK6C2R1-55C-118, offers a 55V drain-source breakdown voltage and a continuous drain current capability of 228A at 25°C (Tc). This AEC-Q101 qualified device features a low on-resistance of 2.3mOhm at 90A and 10V Vgs, with a maximum power dissipation of 300W (Tc). The device utilizes Surface Mount technology in a D2PAK-7 package for efficient thermal management. Key parameters include a gate charge of 253 nC at 10V and input capacitance of 16000 pF at 25V. Operating temperature ranges from -55°C to 175°C. This component is suitable for demanding automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 228A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | D2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 253 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 25 V |
| Qualification | AEC-Q101 |
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