BUK664R4-55C,118
MOSFET N-CH 55V 100A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-channel MOSFET, part number BUK664R4-55C-118, offers a 55V drain-source voltage and a continuous drain current of 100A at 25°C. This AEC-Q101 qualified component features a low Rds(on) of 4.9mOhm at 25A and 10V, with a maximum power dissipation of 204W. The device utilizes Nexperia's advanced TrenchMOS technology for enhanced performance and is supplied in a D2PAK surface mount package. Key parameters include a gate charge of 124 nC at 10V and input capacitance of 7750 pF at 25V. Designed for demanding applications, this MOSFET is suitable for automotive and industrial sectors requiring robust power switching. The operating temperature range is -55°C to 175°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 204W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 124 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7750 pF @ 25 V |
| Qualification | AEC-Q101 |
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