BUK663R7-75C,118
MOSFET N-CH 75V 120A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ BUK663R7-75C-118 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 306W (Tc). The low on-resistance of 4mOhm at 25A and 10V (Vgs) minimizes conduction losses. It operates with a gate-source voltage (Vgs) range of ±16V and a threshold voltage (Vgs(th)) of 2.8V at 1mA. With a gate charge (Qg) of 234 nC at 10V and input capacitance (Ciss) of 15450 pF at 25V, it offers excellent switching characteristics. The TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package provides robust thermal performance. This MOSFET is qualified to AEC-Q101 and is suitable for automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15450 pF @ 25 V |
| Qualification | AEC-Q101 |
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