BUK661R9-40C,118
MOSFET N-CH 40V 120A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK661R9-40C-118, is designed for high-power applications. This device features a 40V Drain-Source Voltage (Vdss) and a continuous drain current capability of 120A at 25°C (Tc). With a maximum power dissipation of 306W (Tc) and a low on-resistance of 1.9mOhm at 25A and 10V, it ensures efficient power transfer. The MOSFET utilizes Nexperia's advanced TrenchMOS technology and is housed in a surface-mount D2PAK (TO-263-3) package for robust thermal performance. Key parameters include a gate charge (Qg) of 260 nC at 10V and input capacitance (Ciss) of 15100 pF at 25V. This component is qualified to AEC-Q101 standards, making it suitable for automotive applications, as well as industrial power supplies and motor control systems. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15100 pF @ 25 V |
| Qualification | AEC-Q101 |
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