BUK6507-75C,127
MOSFET N-CH 75V 100A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK6507-75C-127. This TO-220AB packaged device features a 75V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). The Rds(on) is specified at a maximum of 7.6mOhm at 25A and 10V gate-source voltage. With a maximum power dissipation of 204W (Tc), this MOSFET is suitable for power switching applications. Key parameters include input capacitance (Ciss) of 7600pF (max) at 25V and gate charge (Qg) of 123nC (max) at 10V. It operates across a temperature range of -55°C to 175°C (TJ). This component finds utility in industrial power supplies, automotive applications, and motor control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 204W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 25 V |
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