BUK625R2-30C,118
MOSFET N-CH 30V 90A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK625R2-30C-118, is a high-performance surface-mount device designed for demanding applications. This MOSFET features a 30V Drain-Source voltage and a continuous drain current capability of 90A at 25°C (Tc). With a low on-resistance of 5.2 mOhm at 15A and 10V, it offers efficient power handling with a maximum power dissipation of 128W (Tc). The BUK625R2-30C-118 utilizes Nexperia's TrenchMOS technology, packaged in a TO-252-3, DPAK (SC-63) configuration. Key parameters include a gate charge (Qg) of 54.8 nC at 10V and input capacitance (Ciss) of 3470 pF at 25V. This component is AEC-Q101 qualified and suitable for automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 54.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3470 pF @ 25 V |
| Qualification | AEC-Q101 |
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