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BUK6226-75C,118

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BUK6226-75C,118

MOSFET N-CH 75V 33A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BUK6226-75C-118 is an N-channel power MOSFET optimized for high-efficiency switching applications. This component features a 75V drain-source voltage (Vdss) and a continuous drain current capability of 33A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 29mOhm maximum at 12A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 80W (Tc), it is suitable for demanding thermal environments. The BUK6226-75C-118 is AEC-Q101 qualified and designed for automotive applications, ensuring reliability in harsh operating conditions. Its DPAK (TO-252-3) surface mount package facilitates efficient board layout and thermal management. Key parameters include a gate charge (Qg) of 34nC at 10V and input capacitance (Ciss) of 2000pF at 25V. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Rds On (Max) @ Id, Vgs29mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)80W (Tc)
Vgs(th) (Max) @ Id2.8V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 25 V
QualificationAEC-Q101

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