BUK6210-55C,118
MOSFET N-CH 55V 78A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. presents the BUK6210-55C-118, a TrenchMOS™ N-Channel MOSFET designed for demanding applications. This component features a 55 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 78 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 9.6 mOhm maximum at 15 A and 10 V Vgs. With a maximum power dissipation of 128 W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for high-power switching. The BUK6210-55C-118 is housed in a DPAK (TO-252-3) surface mount package and adheres to AEC-Q101 qualification standards, making it ideal for automotive and industrial power management systems. It includes a gate charge (Qg) of 63 nC at 10 V and an input capacitance (Ciss) of 4000 pF at 25 V.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
| Qualification | AEC-Q101 |
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