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BUK6207-55C,118

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BUK6207-55C,118

MOSFET N-CH 55V 90A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BUK6207-55C-118 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 90A at 25°C (Tc). The BUK6207-55C-118 offers a low on-resistance (Rds On) of 7.8mOhm at 25A and 10V, with a maximum power dissipation of 158W (Tc). It is qualified to AEC-Q101 standards, making it suitable for automotive applications. The MOSFET is housed in a DPAK (TO-252-3, DPAK) surface mount package and is supplied on a Tape & Reel. Key electrical parameters include a Gate Charge (Qg) of 82 nC at 10V and an Input Capacitance (Ciss) of 5160 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs7.8mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)158W (Tc)
Vgs(th) (Max) @ Id2.8V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5160 pF @ 25 V
QualificationAEC-Q101

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