BST82,215
MOSFET N-CH 100V 190MA TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia USA Inc. TrenchMOS™ BST82-215 is a surface-mount N-channel Power MOSFET designed for efficient switching applications. This component features a drain-source breakdown voltage (Vdss) of 100V and a continuous drain current (Id) of 190mA at 25°C (Ta). The device exhibits a maximum on-resistance (Rds On) of 10 Ohm at 150mA and a gate-source voltage (Vgs) of 5V, with a threshold voltage (Vgs(th)) of 2V at 1mA. Input capacitance (Ciss) is specified at a maximum of 40pF at 10V. The BST82-215 is housed in a TO-236AB (SOT-23) package, rated for a maximum power dissipation of 830mW (Tc). It operates across a temperature range of -65°C to 150°C (TJ). This device finds application in various industries, including industrial automation and consumer electronics where reliable power switching is critical.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 150mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-236AB |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
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