Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

BSS87,115

Banner
productimage

BSS87,115

MOSFET N-CH 200V 400MA SOT89

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. N-Channel MOSFET, BSS87-115, offers a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 400mA at 25°C. This surface mount component, packaged in a TO-243AA (SOT-89) with Tape & Reel (TR) packaging, features a maximum on-resistance (Rds On) of 3Ohm at 400mA and 10V Vgs. The input capacitance (Ciss) is specified at a maximum of 120pF at 25V. With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.8V at 1mA, the BSS87-115 operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 580mW (Ta) and 12.5W (Tc). This device is utilized in various industrial applications requiring efficient switching and voltage regulation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
Rds On (Max) @ Id, Vgs3Ohm @ 400mA, 10V
FET Feature-
Power Dissipation (Max)580mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id2.8V @ 1mA
Supplier Device PackageSOT-89
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
PSMN3R9-100YSFX

MOSFET N-CH 100V 120A LFPAK56

product image
PMV27UPEAR

MOSFET P-CH 20V 4.5A TO236AB

product image
BUK764R4-60E,118

MOSFET N-CH 60V 100A D2PAK