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BSS84AK-BR

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BSS84AK-BR

MOSFET P-CH 50V 180MA TO236AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. BSS84AK-BR is a P-Channel MOSFET designed for surface mount applications within the TO-236AB package. This component offers a 50V drain-source breakdown voltage (Vdss) and a continuous drain current of 180mA at 25°C ambient. The device features a maximum on-resistance (Rds On) of 7.5 Ohm at 100mA and 10V Vgs. It supports gate drive voltages of 5V and 10V, with a typical gate charge (Qg) of 0.35 nC at 5V. Rated for AEC-Q101 qualification and an automotive grade, this MOSFET is suitable for operation across a temperature range of -55°C to 150°C. Maximum power dissipation is 1.14W at the case temperature. The BSS84AK-BR is commonly utilized in automotive electronics and general-purpose switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C180mA (Ta)
Rds On (Max) @ Id, Vgs7.5Ohm @ 100mA, 10V
FET Feature-
Power Dissipation (Max)1.14W (Tc)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device PackageTO-236AB
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds36 pF @ 25 V
QualificationAEC-Q101

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